Two new whitepapers: Engineered Si wafers for RF devices and silicon/SOI substrates for GaN growth

We’re excited to share two new whitepapers on engineered substrate solutions for next-generation RF and power devices. Download them to discover how our substrates support the performance and reliability needs of today’s RF and GaN technologies.

4G LTE to 5G and 6G: Engineered RFSi® silicon wafers for high-performance RF devices

As wireless technologies move from 4G LTE to 5G and 6G, RF filters and devices face increasing demands for higher bandwidth, better linearity, and improved isolation. This whitepaper explains how engineered high resistivity silicon wafers with a trap-rich layer help address challenges like parasitic surface conductivity and strict surface uniformity requirements. These wafers enhance the performance and manufacturing yield of acoustic filters (TF-SAW, BAW) and integrated passive devices used in key high-frequency bands.

Enabling next-gen Power and RF GaN devices with optimized silicon and SOI substrates

Gallium Nitride (GaN) is a leading material for power and RF devices due to its superior properties. However, growing high-quality GaN layers on silicon presents mechanical and thermal challenges. This whitepaper explores how optimized silicon and bonded SOI substrates support reliable GaN epitaxy by managing stress, reducing defects, and improving wafer stability. It also highlights the benefits of GaN-on-SOI for enabling integrated, compact device designs.