SOI wafers – Silicon-On-Insulator line

Produced with over 20 years' of expertise Okmetic’s comprehensive line of bonded Silicon On Insulator (SOI) wafers provides an optimal platform for the manufacture of demanding MEMS, sensor, power and RF devices. Okmetic SOI wafers enable additional design freedom, maximum device performance, cost-effectiveness and ease of manufacturing.

Okmetic was among the first silicon wafer suppliers to introduce Silicon On Insulator technology and SOI wafers to MEMS industry, and now the company has been volume producing SOI wafers for over 20 years already. SOI wafers are silicon wafers with a thin silicon film on insulating oxide, and their production requires a very high level of technical expertise. SOI wafers enable the manufacture of the most advanced MEMS, sensor, power and RF devices used in automotive and healthcare applications, smart wristbands, smartphones and tablets as well as applications related to Internet of Things (IoT) utilizing sensor-provided data in device-to-device communication.

SOI wafers provide an optimal platform for the manufacture of MEMS, sensor, power and RF devices

Okmetic’s Silicon on Insulator (SOI) wafers are manufactured by bonding technology. Two silicon wafers are bonded together leaving an insulating oxide layer between them. Typically, sensing elements and IC devices are built on the top device layer. The buried oxide layer is an excellent electric insulating layer and an effective etch-stop, but can be used as a sacrificial layer as well. The bottom handle wafer is supporting the structure, but can also be utilized in sealing the structure or as part of the sensing element or the device.

Comprehensive line of Silicon on Insulator (SOI) wafers

Okmetic’s SOI wafers are manufactured entirely in-house which allows us to monitor critical crystal and wafer parameters to ensure the highest quality of SOI wafers. The widest wafer portfolio on the market enables the selection of e.g. optimal electrical conductivity and different crystallographic orientations to ensure better utilization of the anisotropic properties of silicon. Our sales and technical support are happy to help you find an optimal solution, customized for your needs. 

Okmetic’s SOI wafer line comprise the following products:

Typical SOI specifications

Growth methodCz, MCz, A-MCz®
Diameter150 mm, 200 mm
Crystal orientation<100>, <110>,<111>
N type dopantsPhosphorus
P type dopantsBoron
ResistivityFrom < 0.001 to > 7,000 Ohm-cm
Device layer thicknessFrom 1 μm to > 200 μm
Tolerance ± 0.5 μm (standard BSOI), ± 0.3 μm (0.3 SOI), ± 0.1 μm (E-SOI®),  ± 0.5 μm or lower (C-SOI®)
Buried oxide layer thicknessFrom 0.3 μm to 4 μm, typically between 0.5 μm and 2 μm
Type: Thermal oxide
Handle wafer thicknessFrom 300 μm to 950 μm, typically 725 μm in 200 mm wafer and 380 μm in 150 mm wafer
Back surfacePolished or etched

Okmetic – Technology leader in Silicon On Insulator wafers

Okmetic is a true pioneer in the field of Silicon On Insulator (SOI) wafers as the company started to develop SOI technology for the MEMS industry already in the 1990’s and has been volume producing SOI wafers ever since 2001. The MEMS industry was the first to adopt the new Silicon On Insulator wafer technology and it continues to be the main growth driver for SOI wafer demand. Over the years, SOI wafers have also expanded to power management solutions utilizing trench isolation technologies such as high voltage BCD and lateral HV devices. SOI wafers are also used in the RF field for the needs of which Okmetic has designed High Resistivity BSOI wafers.

2021 Okmetic SOI 20th anniversary

2020 EC-SOI wafer combining E-SOI® and C-SOI® benefits

2019 New C-SOI® wafer production line

2016 Launch of E-SOI® wafer

2015 SOI wafers for power management

2010 SOI-based extremely small pressure sensors and wearable electronics

2009 C-SOI® wafers in volume production

2008 SOI-based silicon microphones

2006 C-SOI® -based inertial sensors for automotive industry

2005 First C-SOI® wafer deliveries

2001 SOI wafer production line started

1998 Okmetic SOI technology established  

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