300 mm epitaxial (EPI) silicon wafers 

Okmetic provides 300 mm epitaxial (EPI) silicon wafers for advanced semiconductor manufacturing, supporting foundries, OSATs, and IDMs across logic, memory, power, imaging, and advanced packaging applications. Our 300 mm EPI wafer portfolio is produced through qualified manufacturing partners. Okmetic retains full responsibility for supply chain management and wafer quality, ensuring a smooth and reliable order-to-delivery process. 

This model ensures consistent prime-grade epitaxial wafer quality, reliable delivery performance, and tailored substrate solutions for device fabrication, bonding and thinning processes, and heterogeneous integration technologies, including TSV, interposers, and HBM. 

PP- epitaxial (EPI) wafers  

Epitaxial wafers featuring a P- substrate and a lightly doped P- EPI layer with customizable thickness and resistivity. High EPI thickness uniformity (<0.5%) and resistivity uniformity (<1%). Uniform radial BMD density for efficient gettering and slip resistance. Well suited for logic ICs and MCUs, NOR Flash, embedded flash, and BCD (PMIC) applications. 

PP+ epitaxial (EPI) wafers with or without LTO  

Epitaxial wafers featuring a P+ substrate and a lightly doped P- EPI layer with customizable thickness and resistivity. High and uniform BMD density and size for effective gettering and process stability. Latch-up suppression and excellent metal control for improved white pixel performance. Well suited for CMOS image sensors (CIS), HBM, and d-TOF applications. 

N++ epitaxial (EPI) wafers (with LTO/Poly)  

Epitaxial wafers featuring a lightly doped N- EPI layer on a heavily doped N++ substrate. Customizable EPI thickness up to 120 µm with resistivity down to <1 mOhm-cm (red phosphorus doping) and <2 mOhm-cm (arsenic doping). Customizable backside sealing options. Well suited for Power MOSFET, SGT MOSFET, and SJ MOSFET applications.  

Thick epitaxial (EPI) wafers 

Epitaxial wafers with a customizable EPI thickness up to 120 µm and thickness uniformity <3%, with EPI resistivity up to 500 Ohm-cm. Well suited for Power MOSFETs and IGBT applications. 

Multi-layer epitaxial (EPI) wafers 

Epitaxial wafers with a P+ substrate and customizable EPI layers, including P- and N- type doping, tailored resistivity, and thickness (total EPI layer thickness <20 µm and thickness uniformity <3%). Optional backside LTO. Well suited for CMOS image sensors (CIS), d-TOF, and Power MOSFET applications. 

NP+ epitaxial (EPI) wafers with LTO 

Epitaxial wafers featuring a P+ substrate and a lightly doped N- EPI layer with customizable thickness and resistivity. High and uniform BMD density and size for effective gettering and process stability. Excellent metal control for improved white pixel performance. Well suited for CMOS image sensors (CIS) and d-TOF applications.