Okmetic participates in WIBASE – Advancing wide bandgap power electronics
WIBASE, “Wide Bandgap Semiconductor Power Electronics,” is a Finnish initiative advancing wide bandgap semiconductor technologies for next generation power electronics. The project builds national capabilities in wide bandgap device processing, prototyping, integration, packaging, testing, and lifetime modelling to support the transition toward more efficient and sustainable power conversion.
The consortium is coordinated by VTT Technical Research Centre and comprises ten partners, including six companies and four leading Finnish research organizations. The industrial partners represent the full value chain from advanced materials, thin film expertise, and engineered silicon substrates to power electronics applications.
The three-year project addresses key challenges that limit wide bandgap adoption, including device and module reliability, material defects, thermal management, and high-temperature interconnects. WIBASE fosters close collaboration with leading international research groups and supports technology, know-how, and IP creation in wide bandgap power technologies. The project is funded by Business Finland.
The role of silicon wafers
GaN-on-Si is an important wide bandgap technology that brings together the high electron mobility, thermal stability, and ability to handle high voltages of gallium nitride with the scalability and cost efficiency of silicon. Silicon substrates support large wafer sizes, stable supply, and reliable high-volume manufacturing. GaN-on-Si also offers potential lifecycle and energy-efficiency benefits valued in electric mobility, renewable energy, and industrial power electronics.
Okmetic collaborates with WIBASE partners to develop and characterize optimized silicon substrates for GaN power devices. Drawing on our experience in supplying Power GaN Substrate wafers, we aim to provide a reliable, well-controlled silicon platform that supports the performance and manufacturability requirements of next generation wide bandgap power technologies.
Project outcomes driving next-generation technologies
WIBASE will help establish an expertise cluster in wide bandgap power electronics. It supports Finland’s technological self-sufficiency, strengthens intellectual property creation, and enhances the competitiveness of the semiconductor and power electronics industry. The outcomes will also benefit the global power device sector through improved materials, advanced silicon substrates, and manufacturing know-how.
Wibase projects Finnish partners include Okmetic, VTT, Aalto University, LUT University and University of Helsinki, ABB, Picosun, Danfoss Drives, Comptek Solutions, Kempower
